Features Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 230 V Maximum Collector-Emitter Voltage |Vce|: 230 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 70 MHz Collector Capacitance (Cc): 30 pF Forward Current Transfer Ratio (hFE), MIN: 100 Noise Figure, dB
