Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 200 W Maximum Collector-Base Voltage |Vcb|: 200 V Maximum Collector Current |Ic max|: 17 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 20 MHz Forward Current Transfer Ratio (hFE), MIN: 10
